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Abstract

A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or SiGematerial with 0.1≦x<1 in the presence of a chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidizing agent, (C) at least one type of an organic compound which comprises at least {k} moieties (Z), but excluding salts whose anions are inorganic and whose only organic cation is [NRRRR], wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (—OH), alkoxy (—OR), heterocyclic alkoxy (—ORas part of a heterocyclic structure), carboxylic acid (—COOH), carboxylate (—COOR), amino (—NRR), heterocyclic amino (—NRRas part of a heterocyclic structure), imino (═N—Ror —N═R), heterocyclic imino (═N—Ror —N═Ras part of a heterocyclic structure), phosphonate (—P(=0)(OR)(OR)), phosphate (-0-P(=0)(OR)(OR)), phosphonic acid (—P(=0)(OH)), phosphoric acid (-0-P(=0)(OH)) moiety, or their protonated or deprotonated forms, R, R, R, Ris—independently from each other—alkyl, aryl, alkylaryl, or arylalkyl, R, R, R, R, Ris—independently from each other—H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkylene, or arylalkylene, R, R, Ris—independently from each other—H, alkyl, aryl, alkylaryl, or arylalkyl, and R, R, Rdoes not comprise any moiety (Z), Ris alkyl, aryl, alkylaryl, or arylalkyl, and Rdoes not comprise any moiety (Z), and (D) an aqueous medium.