The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Jun. 01, 2015
Globalfoundries Inc., Grand Cayman, KY;
Michael P. Chudzik, Sunnyvale, CA (US);
Brian J. Greene, Fishkill, NY (US);
Edward P. Maciejewski, Wappingers Falls, NY (US);
Kevin McStay, Hopewell Junction, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Chengwen Pei, Danbury, CT (US);
Werner A. Rausch, Stormville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A semiconductor device such as a FinFET includes a plurality of fins formed upon a substrate and a gate covering a portion of the fins. Diamond-shaped volumes are formed on the sidewalls of the fins by epitaxial growth which may be limited to avoid merging of the volumes or where the epitaxy volumes have merged. Because of the difficulties in managing merging of the diamond-shaped volumes, a controlled merger of the diamond-shaped volumes includes depositing an amorphous semiconductor material upon the diamond-shaped volumes and a crystallization process to crystallize the deposited semiconductor material on the diamond-shaped volumes to fabricate controllable and uniformly merged source drain.