The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Oct. 25, 2013
Infineon Technologies Dresden Gmbh, Dresden, DE;
Kurt Sorschag, Villach-Landskron, AT;
Daniel Sarlette, Radebeul, DE;
Felix Braun, Dresden, DE;
Marcel Heller, Helmsdorf, DE;
Dieter Kaiser, Dresden, DE;
Ingo Meusel, Dresden, DE;
Marko Lemke, Dresden, DE;
Anton Mauder, Kolbermoor, DE;
Helmut Strack, Munich, DE;
Infineon Technologies Dresden GmbH, Dresden, DE;
Abstract
A method for producing a semiconductor device is provided. The method includes: forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas; forming a support structure mechanically connecting the semiconductor mesas spaced apart from each other by one of the substantially empty trench and the trench substantially filled with the sacrificial layer; and processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure.