The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Dec. 13, 2012
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Yi Sheng Cheng, Yongkang, TW;
Chun Fu Chen, Taipei, TW;
Yung Tai Hung, Chiayi, TW;
Chin Ta Su, Yunlin Country, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01); H01L 21/3105 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/28052 (2013.01); H01L 21/28123 (2013.01); H01L 21/31053 (2013.01); H01L 21/76232 (2013.01); H01L 27/11531 (2013.01); H01L 27/11573 (2013.01);
Abstract
A semiconductor device includes a substrate having a first and second region, a first structure and a second structure. The first structure is formed over the substrate in the first region. The first structure has a first height. The second structure is formed over the substrate in the second region. The second structure has a second height different from the first height.