The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Apr. 30, 2014
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Jung Pill Kim, San Diego, CA (US);

Taehyun Kim, San Diego, CA (US);

Sungryul Kim, San Diego, CA (US);

Xiangyu Dong, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/02 (2006.01); G11C 29/30 (2006.01); G11C 7/10 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 14/00 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 29/04 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/026 (2013.01); G06F 11/106 (2013.01); G06F 11/1072 (2013.01); G06F 11/1076 (2013.01); G11C 7/06 (2013.01); G11C 7/08 (2013.01); G11C 7/1072 (2013.01); G11C 14/009 (2013.01); G11C 14/0081 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 29/30 (2013.01); G11C 29/52 (2013.01); G11C 7/1006 (2013.01); G11C 11/16 (2013.01); G11C 13/004 (2013.01); G11C 2029/0411 (2013.01);
Abstract

A device includes a plurality of memory cells of a memory array, a sense amplifier of the memory array, and selection logic of the memory array. The sense amplifier is configured to sense at least one data value from at least one memory cell of the plurality of memory cells. The selection logic is configured to select between causing the sense amplifier to sense the at least one data value using a first sensing delay and causing the sense amplifier to sense the at least one data value using a second sensing delay. The second sensing delay is longer than the first sensing delay.


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