The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Dec. 09, 2013
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Aselta Nanographics, Grenoble, FR;
Jerome Belledent, Meylan, FR;
Commissariat à l'énergie atomique et aux énergies alternatives, Paris, FR;
ASELTA NANOGRAPHICS, Grenoble, FR;
Abstract
This method for estimating patterns (M',D′) to be printed by means of electron-beam lithography, comprises the following steps: printing (), in a resin, a set of calibration patterns (M, D); measuring () characteristic dimensions (CD) of this set; supplying an estimation () of the point spread function (PSF) based on the characteristic dimensions (CD) measured; estimating () the patterns (M′,D′) to be printed by convoluting the point spread function (PSF) supplied with an initial value of the patterns (M,D). Furthermore, each calibration pattern printed includes a central zone exposed to the electron beam and a plurality of surrounding concentric zones with rotational symmetry. The characteristic dimensions measured are characteristic dimensions (CD) of the central zones of the patterns. The estimation of the point spread function (PSF) is calculated by inverting analytical modelling of the effect, on these characteristic dimensions, of applying the first point spread function portion (PSF) characterising electrons back-scattered by the substrate to the set of calibration patterns (M, D).