The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Apr. 01, 2014
Tokyo Electron Limited, Tokyo, JP;
Masayuki Sawataishi, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
Disclosed are a plasma processing method and a plasma processing apparatus which collectively perform etching under the same etching conditions while suppressing a shape abnormality. The multilayer film material has a polysilicon layer, a first metal layer formed on the polysilicon layer, and a hard mask layer which contains a tungsten layer formed on the first metal layer. In the method, plasma is generated by a mixed gas of a chloride-containing gas which contains a compound containing chlorine and silicon, a compound containing chlorine and boron, or a compound containing chlorine and hydrogen, a chlorine-containing gas which contains chlorine, and a processing gas which contains carbon and fluorine, and the hard mask layer is used as an etching mask so as to perform the etching from a top surface of the first metal layer to a bottom surface of the polysilicon layer.