The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Oct. 04, 2012
Gas-phase Growth Ltd., Koganei-shi, JP;
Tokyo Electron Limited, Minato-Ku, JP;
Hideaki Machida, Kunitachi, JP;
Masato Ishikawa, Nakano-ku, JP;
Hiroshi Sudoh, Koganei, JP;
Yumiko Kawano, Nirasaki, JP;
Kazutoshi Iwai, Nirasaki, JP;
GAS-PHASE GROWTH LTD., Koganei-shi, JP;
Tokyo Electron Limited, Minato-ku, JE;
Abstract
A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.