The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Feb. 26, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Tsung-Yao Wen, Hsinchu, TW;
Yao-De Chiou, Taoyuan, TW;
Sheng-Chen Wang, Hsinchu, TW;
Sai-Hooi Yeong, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsin-Chu, TW;
Abstract
A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending above the substrate. The FinFET device structure includes an isolation structure, and the fin structure is embedded in the isolation structure. The FinFET device structure also includes a gate structure formed on a middle portion of the fin structure. The gate structure has a top portion and bottom portion, and the bottom portion is wider than the top portion. The FinFET device structure further includes a source/drain (S/D) structure formed adjacent to the gate structure.