The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Aug. 13, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Hsuan Hsiao, Hsinchu, TW;

Yen-Hao Shih, New Taipei, TW;

Shih-Hung Chen, Hsinchu County, TW;

Hang-Ting Lue, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 27/11531 (2013.01); H01L 27/11573 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01);
Abstract

A memory device and a manufacturing method of the same are provided. The memory device includes a substrate, a 3D memory array, a periphery circuit, and a conductive connection structure. The 3D memory array and the periphery circuit are stacked on the substrate. The periphery circuit includes a patterned metal layer and a contact structure electrically connected to the patterned metal layer. The conductive connection structure is electrically connected to the patterned metal layer. The 3D memory array is electrically connected to the periphery circuit via the conductive connection structure.


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