The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

May. 30, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chung-Liang Cheng, Changhua, TW;

Yen-Yu Chen, Taichung, TW;

Chang-Sheng Lee, Hsin-Chu, TW;

Wei Zhang, Chupei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 21/3105 (2006.01); B24B 37/013 (2012.01); B24B 49/12 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); B24B 37/013 (2013.01); B24B 49/12 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/67075 (2013.01); H01L 22/12 (2013.01);
Abstract

A planarization method is provided. The planarization method includes providing a wafer, in which the wafer includes a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer, performing a chemical-mechanical planarization (CMP) process on the planarization layer, providing an incident light to a surface of the wafer under the CMP process, detecting absorption of the incident light by the surface layer; and stopping the CMP process in response to an increase in the detected absorption of the incident light.


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