The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Apr. 23, 2015
Globalfoundries Inc., Grand Cayman, KY;
Zhaoxu Shen, Clifton Park, NY (US);
Min-hwa Chi, Malta, NY (US);
Haiting Wang, Clifton Park, NY (US);
Qin Wang, Ballston Spa, NY (US);
Meixiong Zhao, Ballston Lake, NY (US);
Duohui Bei, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods and transistors for circuit structures are provided. The methods include, for instance: defining a channel region in a substrate, the channel region having at least one channel region sidewall adjoining an isolation material; recessing the isolation material to expose an upper portion of the at least one channel region sidewall; and providing a gate structure over a gate interface area with the channel region. The gate interface area includes at least the upper portion of the at least one channel region sidewall and an upper surface of the channel region so that a threshold voltage of the gate structure may be reduced. The methods may also include etching an elongate notch in the upper portion of the at least one channel region sidewall to increase a size of the gate interface area and further reduce the threshold voltage of the gate structure.