The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Feb. 13, 2015
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Ming-Tzong Yang, Baoshan Township, Hsinchu County, TW;

Cheng-Chou Hung, Hukou Township, Hsinchu County, TW;

Tung-Hsing Lee, New Taipei, TW;

Wei-Che Huang, Zhudong Township, Hsinchu County, TW;

Yu-Hua Huang, Hsinchu, TW;

Assignee:

MEDIATEK INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/268 (2006.01); H01L 21/306 (2006.01); H01L 23/522 (2006.01); H01L 31/18 (2006.01); H01L 23/48 (2006.01); H01L 21/02 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/02107 (2013.01); H01L 21/268 (2013.01); H01L 21/30625 (2013.01); H01L 23/481 (2013.01); H01L 23/5227 (2013.01); H01L 23/66 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 31/18 (2013.01); H01L 24/16 (2013.01); H01L 2223/6616 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/11 (2013.01); H01L 2924/12042 (2013.01);
Abstract

A method for fabricating a electronic device package provides a electronic device chip, wherein the electronic device chip includes a semiconductor substrate having a front side and a back side, wherein the semiconductor substrate has a first thickness, an electronic component disposed on the front side of the semiconductor substrate, and an interconnect structure disposed on the electronic component. The method further performs a thinning process to remove a portion of the semiconductor substrate from the back side thereof. The method then removes a portion of the thinned semiconductor substrate and a portion of a dielectric layer of the interconnect structure from a back side of the thinned semiconductor substrate until a first metal layer pattern of the interconnect structure is exposed, thereby forming a through hole. Finally, the method forms a TSV structure in the through hole, and mounts the electronic device chip on a base.


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