The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Feb. 09, 2012
Takuya Sasaki, Nishishirakawa, JP;
Hiromasa Hashimoto, Nishishirakawa, JP;
Kazuya Sato, Nishishirakawa, JP;
Ayumu Sato, Jyoetsu, JP;
Takuya Sasaki, Nishishirakawa, JP;
Hiromasa Hashimoto, Nishishirakawa, JP;
Kazuya Sato, Nishishirakawa, JP;
Ayumu Sato, Jyoetsu, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
The present invention provides a method for producing a silicon wafer including a step of, after growing the oxide film on one surface of a raw material silicon wafer by chemical-vapor deposition, performing double-side polishing of the raw material silicon wafer in such a manner that a suede polishing pad or a velour polishing pad with an asker-C rubber hardness of 50° or more but less than 90° is used for the oxide-film surface.