The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Jul. 04, 2014
Qualcomm Incorporated, San Diego, CA (US);
Shiqun Gu, San Diego, CA (US);
Ratibor Radojcic, San Diego, CA (US);
Dong Wook Kim, San Diego, CA (US);
Jae Sik Lee, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Some novel features pertain to an integrated device (e.g., integrated package) that includes a base portion for the integrated device, a first die (e.g., first wafer level die), and a second die (e.g., second wafer level die). The base portion includes a first inorganic dielectric layer, a first set of interconnects located in the first inorganic dielectric layer, a second dielectric layer different from the first inorganic dielectric layer, and a set of redistribution metal layers in the second dielectric layer. The first die is coupled to a first surface of the base portion. The second die is coupled to the first surface of the base portion, the second die is electrically coupled to the first die through the first set of interconnects.