The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Apr. 21, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Shao-Wei Wang, Taichung, TW;
Keng-Jen Lin, Kaohsiung, TW;
Yu-Tung Hsiao, Tainan, TW;
Shu-Ming Yeh, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a method for forming a stacked layer structure, including: first, a recess is provided, next, an oxide layer is formed in the recess, where the oxide layer has a thickness T, a high-k layer is formed on the oxide layer, a barrier layer is formed on the high-k layer, a silicon layer is then formed on the barrier layer, afterwards, an annealing process is performed on the silicon layer, so as to form an oxygen-containing layer between the silicon layer and the barrier layer, where the oxide layer has a thickness Tafter the annealing process is performed, and satisfies the relationship: (T−T)/T≦0.05, and the silicon layer and the oxygen-containing layer are removed.