The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Jun. 24, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Gwo-Chyuan Kuoh, Hsinchu, TW;
Chen-Chung Lai, Guanxi Township, TW;
Kang-Min Kuo, Zhubei, TW;
Bor-Zen Tien, Hsinchu, TW;
Yen-Ming Peng, Zhongli, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to an integrated chip having one or more back-end-of-the-line (BEOL) selectivity stress films that apply a stress that improves the performance of semiconductor devices underlying the BEOL selectivity stress films, and an associated method of formation. In some embodiments, the integrated chip has a semiconductor substrate with one or more semiconductor devices having a first device type. A stress transfer element is located within a back-end-of-the-line stack at a position over the one or more semiconductor devices. A selectivity stress film is located over the stress transfer element. The selectivity stress film induces a stress upon the stress transfer element, wherein the stress has a compressive or tensile state depending on the first device type of the one or more semiconductor devices. The stress acts upon the one or more semiconductor devices to improve their performance.