The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Jul. 03, 2013
Applicants:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Jin-Bum Kim, Seoul, KR;
Kyung-Bum Koo, Gyeonggi-do, KR;
Taek-Soo Jeon, Gyeonggi-do, KR;
Tae-Ho Cha, Gyeonggi-do, KR;
Judson R Holt, Wappingers Falls, NY (US);
Henry K Utomo, Newburgh, NY (US);
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 29/165 (2013.01); H01L 29/66628 (2013.01); H01L 29/7834 (2013.01); H01L 29/7848 (2013.01);
Abstract
A gate pattern is formed on a first region of a substrate. An epitaxial layer is formed on a second region of the substrate. A recess is formed in the second region of the substrate by etching the epitaxial layer and the substrate underneath. The first region is adjacent to the second region.