The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Mar. 06, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Li-Ting Wang, Hsinchu, TW;
Teng-Chun Tsai, Hsinchu, TW;
Cheng-Tung Lin, Jhudong Township, TW;
Hung-Ta Lin, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a semiconductor device having a delta doped sheet layer within a transistor's source/drain region to reduce contact resistance, and an associated method. In some embodiments, a dielectric layer is disposed over the transistor. A trench is disposed through the dielectric layer to the source/drain region and a conductive contact is disposed in the trench. The source/drain region comprises a delta doped sheet layer with a doping concentration that is higher than rest of the source/drain region.