The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Nov. 05, 2015
Intel Corporation, Santa Clara, CA (US);
Fatma Arzum Simsek-Ege, Boise, ID (US);
Jie Jason Sun, Boise, ID (US);
Benben Li, Boise, ID (US);
Srikant Jayanti, Boise, ID (US);
Han Zhao, Santa Clara, CA (US);
Guangyu Huang, Boise, ID (US);
Haitao Liu, Meridian, ID (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A hollow-channel memory device comprises a source layer, a first hollow-channel pillar structure formed on the source layer, and a second hollow-channel pillar structure formed on the first hollow-channel pillar structure. The first hollow-channel pillar structure comprises a first thin channel and the second hollow-channel pillar structure comprises a second thin channel that is in contact with the first thin channel. In one exemplary embodiment, the first thin channel comprises a first level of doping; and the second thin channel comprises a second level of doping that is different from the first level of doping. In another exemplary embodiment, the first and second levels of doping are the same.