The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Dec. 18, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Kuo-Yuan Ho, Hsinchu, TW;
Li-Jen Chen, Hsinchu County, TW;
Chih-Cheng Kao, Taipei, TW;
Shih-Ting Zeng, Hsinchu, TW;
Yi-Hsiung Lin, Hsinchu County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); G05B 19/00 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01);
Abstract
Systems and methods are provided for ion implantation. For example, ion implantation is performed using a first ion implant tool. At least one condition parameter associated with the first ion implant tool is dynamically obtained. Whether the first ion implant tool is in a first condition is determined based on the at least one condition parameter. Ion implantation is performed using a second ion implant tool based on the determination.