The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Jan. 16, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Chiao Tung University, Hsinchu, TW;
Ming-Long Fan, Guoxing Township, TW;
Pi-Ho Hu, Hsin-Chu, TW;
Yin-Nien Chen, Hsin-Chu, TW;
Pin Su, Jhubei, TW;
Ching-Te (Kent) Chuang, New Taipei, TW;
Samuel C. Pan, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A circuit includes a hybrid switch, which includes a Tunnel Field-Effect Transistor (TFET) having a first source, a first drain, and a first gate. The hybrid switch further includes a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) connected to the TFET in parallel, with the MOSFET including a second source connected to the first source, a second drain connected to the first drain, and a second gate connected to the first gate.