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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9406772 B1

PDFFull Text
Date of Patent:
Aug. 02, 2016

Filed:

Jan. 30, 2015

Semiconductor structure with a multilayer gate oxide and method of fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Shao-Wei Wang, Taichung, TW;

Shu-Ming Yeh, Tainan, TW;

Yu-Tung Hsiao, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Tu-Tu Ho

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/0206 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/31051 (2013.01); H01L 29/42364 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor structure with a multilayer gate oxide is provided. The structure includes a substrate. A multilayer gate oxide is disposed on the substrate, wherein the multilayer gate oxide includes a first gate oxide and a second gate oxide. The first gate oxide contacts the substrate and the second gate oxide is disposed on and contacts the first gate oxide. The second gate oxide is hydrophilic. The first gate oxide is formed by a thermal oxidation process. The second gate oxide is formed by a chemical treatment.

Find Patent Forward Citations

Wang, Shao-Wei. (2016). Semiconductor structure with a multilayer gate oxide and method of fabricating the same (U.S. Patent No. 9406772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9406772

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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