The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Mar. 16, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Cheng-Ta Wu, Chiayi County, TW;
Cheng-Wei Chen, Tainan, TW;
Hong-Yi Wu, Hsinchu, TW;
Shiu-Ko Jangjian, Tainan, TW;
Wei-Ming You, Taipei, TW;
Ting-Chun Wang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure and a method for forming the same are provided. The method includes providing a substrate, forming a fin structure extruding from the substrate, forming shallow trench isolations over the substrate, and forming an oxide material over the fin structure. The method further includes forming a carbon-doped amorphous silicon layer or a carbon-doped poly silicon layer over the oxide material, wherein the forming a carbon-doped amorphous silicon layer or a carbon-doped poly silicon layer includes doping carbon in a range of from about 5E19/cmto about 1E22/cm.