The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Feb. 28, 2012
Lucian Shifren, San Jose, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Thomas Hoffmann, San Jose, CA (US);
Scott E. Thompson, Gainesville, FL (US);
Lucian Shifren, San Jose, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Thomas Hoffmann, San Jose, CA (US);
Scott E. Thompson, Gainesville, FL (US);
Mie Fujitsu Semiconductor Limited, Kuwana, Mie, JP;
Abstract
Fabrication of a first device on a substrate is performed by exposing a first device region, removing a portion of the substrate to create a trench in the first device region, forming a screen layer with a first dopant concentration in the trench on the substrate, and forming an epitaxial channel on the screen layer having a first thickness. On or more other devices are similarly formed on the substrate independent of each other with epitaxial channels of different thicknesses than the first thickness. Devices with screen layers having the same dopant concentration but with different epitaxial channel thicknesses have different threshold voltages. Thus, a wide variety of threshold voltage devices can be formed on the same substrate. Further threshold voltage setting can be achieved through variations in the dopant concentration of the screen layers.