The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Mar. 06, 2012
Applicants:

Bo-heng Liu, Hsinchu Science Park, TW;

Chi-chung Kei, Hsinchu Science Park, TW;

Meng-yen Tsai, Hsinchu Science Park, TW;

Wen-hao Cho, Hsinchu Science Park, TW;

Chih-chieh Yu, Hsinchu Science Park, TW;

Chien-nan Hsiao, Hsinchu Science Park, TW;

Da-ren Liu, Hsinchu Science Park, TW;

Inventors:

Bo-Heng Liu, Hsinchu Science Park, TW;

Chi-Chung Kei, Hsinchu Science Park, TW;

Meng-Yen Tsai, Hsinchu Science Park, TW;

Wen-Hao Cho, Hsinchu Science Park, TW;

Chih-Chieh Yu, Hsinchu Science Park, TW;

Chien-Nan Hsiao, Hsinchu Science Park, TW;

Da-Ren Liu, Hsinchu Science Park, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/45548 (2013.01);
Abstract

A plasma enhanced atomic layer deposition (PEALD) system used to form thin films on substrates includes a plasma chamber, a processing chamber, two or more ring units and a control piece. The plasma chamber includes an outer and an inner quartz tubular units, whose central axes are aligned with each other. Therefore, plasma is held and concentrated in an annular space formed between the outer and outer quartz tubular units. Due to the first and second through holes, the plasma flow may be more evenly distributed on most of the surface of the substrate to form evenly distributed thin films and nano particles on the substrate. In addition, due to the alignment and misalignment between the first and second through holes, the plasma generated in the plasma chamber may be swiftly allowed or disallowed to enter to the processing chamber to prevent the precursor from forming a CVD.


Find Patent Forward Citations

Loading…