The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Jun. 12, 2012
Jingmei Liang, San Jose, CA (US);
Xiaolin Chen, San Ramon, CA (US);
Nitin K. Ingle, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Jingmei Liang, San Jose, CA (US);
Xiaolin Chen, San Ramon, CA (US);
Nitin K. Ingle, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.