The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Jun. 13, 2013
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chin-Cheng Chien, Tainan, TW;

Chun-Yuan Wu, Yun-Lin County, TW;

Chin-Fu Lin, Tainan, TW;

Chih-Chien Liu, Taipei, TW;

Chia-Lin Hsu, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor structure includes a fin-shaped structure and a gate. The fin-shaped structure is located in a substrate, wherein the fin-shaped structure has a through hole located right below a suspended part. The gate surrounds the suspended part. Moreover, the present invention also provides a semiconductor process including the following steps for forming said semiconductor structure. A substrate is provided. A fin-shaped structure is formed in the substrate, wherein the fin-shaped structure has a bottom part and a top part. A part of the bottom part is removed to form a suspended part in the corresponding top part, thereby forming the suspended part over a through hole. A gate is formed to surround the suspended part.


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