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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9401384 B1

PDFFull Text
Expired
Date of Patent:
Jul. 26, 2016

Filed:

Oct. 08, 2015

Method of preparing self-aligned isolation regions between sensor elements

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Chi Fu, Zhudong Township, TW;

Kai Tzeng, Ping-Pong Nei-Pui, TW;

Wen-Chen Lu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., , TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Calvin Lee

Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/02 (2006.01); H01L 27/148 (2006.01); H01L 21/762 (2006.01); H01L 27/146 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14887 (2013.01); H01L 21/76237 (2013.01); H01L 27/1463 (2013.01); H01L 27/14654 (2013.01); H01L 27/14672 (2013.01); H01L 27/14683 (2013.01); H01L 27/14689 (2013.01); H01L 31/18 (2013.01);
Abstract

A method of preparing self-aligned isolation regions between two neighboring sensor elements on a substrate includes patterning an oxide layer to form an opening between the two neighboring sensor elements on the substrate. The method further includes performing a first implant to form a deep doped region between the two neighboring sensor elements, wherein a top portion of the deep doped region is below a top surface of the substrate. The method further includes performing a second implant to form a shallow doped region between the two neighboring sensor elements, wherein a bottom portion of the shallow doped region overlaps with the top portion of the deep doped region.

Find Patent Forward Citations

Fu, Shih-Chi. (2016). Method of preparing self-aligned isolation regions between sensor elements (U.S. Patent No. 9401384). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9401384

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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