The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2016

Filed:

Nov. 19, 2015
Applicant:

Deca Technologies Inc., Tempe, AZ (US);

Inventors:

Craig Bishop, Tucson, AZ (US);

Vaibhav Joga Singh Bora, Chandler, AZ (US);

Christopher M. Scanlan, Chandler, AZ (US);

Timothy L. Olson, Phoenix, AZ (US);

Assignee:

DECA Technologies, Inc., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G06F 17/5081 (2013.01); H01L 21/768 (2013.01); H01L 21/78 (2013.01); H01L 23/544 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); G06F 2217/12 (2013.01); H01L 2223/54453 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/037 (2013.01); H01L 2224/117 (2013.01);
Abstract

A method of automated optical inspection (AOI) for a plurality of unique semiconductor packages can comprise providing a plurality of semiconductor die formed as a reconstituted wafer. A plurality of unit specific patterns can be formed by forming a unit specific pattern over each of the plurality of semiconductor die, wherein each of the unit specific patterns is customized to fit its respective semiconductor die. A plurality of images can be acquired by acquiring an image for each of the plurality of unit specific patterns. A plurality of unique reference standards can be created by creating a unique reference standard for each of the plurality of unit specific patterns. Defects can be detected in the plurality of unit specific patterns by comparing one of the plurality of unique reference standards to a corresponding one of the plurality of images for each of the plurality of unit specific patterns.


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