The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Mar. 23, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chun Hsiung Tsai, Xinpu Township, TW;
Shiang-Rung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/324 (2013.01); H01L 29/66795 (2013.01);
Abstract
An embodiment method of controlling fin bending in a fin field-effect transistor (FinFET) includes forming an isolation region over a substrate, performing a first annealing process, the first annealing process including a first wet anneal, a second wet anneal, and a first dry anneal. In an embodiment, the first annealing process is followed by a chemical mechanical planarization (CMP) process, an etching process, and a second annealing process for the isolation region.