The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
May. 28, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Duan Quan Liao, Singapore, SG;
Wei Cheng, Singapore, SG;
Yikun Chen, Singapore, SG;
Ching Hwa Tey, Singapore, SG;
Xiao Zhong Zhu, Singapore, SG;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. A first gate is formed on a substrate, wherein the first gate includes a stacked gate on the substrate and a cap on the stacked gate. A spacer material is formed to conformally cover the first gate and the substrate. The spacer material is etched to form a spacer on a side of the first gate and a block on the other side of the first gate corresponding to the side. A material covers the substrate, the block, the first gate and the spacer, wherein the top surface of the material is a flat surface. The block, the spacer and the material are pulled down with the same pulling selectivity so that an assisting gate is formed from the block and a selective gate is formed from the spacer.