The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Sep. 17, 2014
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Takashi Yoshii, Jyoetsu, JP;
Yoshio Kawai, Jyoetsu, JP;
Yukio Inazuki, Jyoetsu, JP;
Satoshi Watanabe, Jyoetsu, JP;
Akira Ikeda, Jyoetsu, JP;
Toyohisa Sakurada, Jyoetsu, JP;
Hideo Kaneko, Jyoetsu, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the inorganic film, comprising: forming the silicon-containing inorganic film; heat treating the formed silicon-containing inorganic film at a temperature more than 200° C. under an atmosphere containing oxygen; performing a silylation process after the heat treatment; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.