The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Mar. 23, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Hsiang-Chen Lee, Kaohsiung, TW;
Ping-Chia Shih, Tainan, TW;
Chi-Cheng Huang, Kaohsiung, TW;
Wan-Fang Chung, Chiayi, TW;
Yu-Chun Chang, Taichung, TW;
Je-Yi Su, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device is disclosed. Preferably, two hard masks are utilized to define the width of the first gate (may serve for a control gate) and the width of the second gate (may serve for a select gate). The widths are thus well controlled. For example, in an embodiment, the width of the select gate may be adjusted in advance as desired, and the select gate is protected by the second hard mask during an etch process, so as to obtain a select gate which upper portion has an appropriate width. Accordingly the semiconductor device would still have an excellent performance upon miniaturization.