The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Dec. 08, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Xusheng Bao, Singapore, SG;

Ma Phoo Pwint Hlaing, Singapore, SG;

Jian Zuo, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 23/3114 (2013.01); H01L 23/5329 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 23/525 (2013.01); H01L 24/03 (2013.01); H01L 24/94 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/034 (2013.01); H01L 2224/035 (2013.01); H01L 2224/0332 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03505 (2013.01); H01L 2224/03632 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05086 (2013.01); H01L 2224/05088 (2013.01); H01L 2224/05093 (2013.01); H01L 2224/05094 (2013.01); H01L 2224/05095 (2013.01); H01L 2224/05096 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/118 (2013.01); H01L 2224/1111 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11466 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11916 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13011 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13078 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13553 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/301 (2013.01);
Abstract

A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer.


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