The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Aug. 05, 2014
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Tristan Ma, Lexington, MA (US);
Ludovic Godet, Sunnyvale, CA (US);
Thomas R. Omstead, Gloucester, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
In one embodiment, a method for etching a metal layer on a substrate may include providing a hydrogen-containing gas and an impurity gas to a plasma chamber; generating a plasma from the hydrogen-containing gas and the impurity gas in the plasma chamber, the plasma comprising hydrogen-containing ions; providing gaseous species from the plasma chamber to the substrate, wherein the providing the gaseous species comprises directing an ion beam comprising the hydrogen-containing ions formed from the plasma through an extraction aperture of an extraction plate disposed between the substrate and the plasma.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile