The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Jan. 11, 2013
Applicant:

Strasbaugh, San Luis Obispo, CA (US);

Inventors:

William J. Kalenian, San Luis Obispo, CA (US);

Thomas A. Walsh, Atascadero, CA (US);

Michael R. Vogtmann, San Luis Obispo, CA (US);

Benjamin C. Smedley, San Luis Obispo, CA (US);

Larry A. Spiegel, Atascadero, CA (US);

Thomas E. Brake, San Luis Obispo, CA (US);

Assignee:

Strasbaugh, San Luis Obispo, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 49/00 (2012.01); B24B 49/04 (2006.01); B24B 7/22 (2006.01);
U.S. Cl.
CPC ...
B24B 49/00 (2013.01); B24B 7/228 (2013.01); B24B 49/04 (2013.01);
Abstract

Some embodiments provide methods of processing wafers comprising: positioning a stacked wafer into a position to be ground, wherein the stacked wafer comprises a first wafer secured with a carrier-wafer, wherein the first wafer is secured with the carrier-wafer such that a surface of the first wafer is exposed to be ground; initiating a grinding of the first wafer while supported by the carrier-wafer; activating one or more sensors relative to the first wafer while grinding the first wafer; determining, while grinding the first wafer, a thickness of the first wafer separate from a thickness of the carrier-wafer as a function of data from the one or more sensors; determining whether the determined thickness of the first wafer has a predefined relationship with a first thickness threshold; and halting the wafer grinding when the thickness of the first wafer has the predefined relationship with the first thickness threshold.


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