The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jan. 16, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sang-chul Youn, Suwon-si, KR;
Gyu-hee Park, Hwaseong-si, KR;
Youn-joung Cho, Hwaseong-si, KR;
Seung-min Ryu, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/28518 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/76879 (2013.01); H01L 27/11556 (2013.01); H01L 29/4916 (2013.01); H01L 29/66825 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01);
Abstract
A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.