The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2016

Filed:

Aug. 16, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ru-Gun Liu, Zhubei, TW;

Tung-Heng Hsieh, Zhudong Town, TW;

Tsung-Chieh Tsai, Chu-Bei, TW;

Juing-Yi Wu, Hsinchu, TW;

Liang-Yao Lee, Taoyuan, TW;

Jyh-Kang Ting, Baoshan Township, TW;

Chun-Yi Lee, Beipu Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 17/5072 (2013.01); G06F 17/5081 (2013.01); H01L 21/823871 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for mask optimization, the method including moving any features of a gate contact mask that are in violation of a spacing rule to a second layer contact mask, splitting an elongated feature of the second layer mask that is too close to a feature moved to the second layer mask from the gate contact mask, and connecting two split features of a first layer contact mask, the split features corresponding to the elongated feature of the second layer mask.


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