The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Sep. 10, 2015
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Bo Xie, San Jose, CA (US);
Kang Sub Yim, Palo Alto, CA (US);
Cheng Pan, San Jose, CA (US);
Sure Ngo, Dublin, CA (US);
Taewan Kim, San Jose, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/31 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 21/02126 (2013.01); H01L 21/02203 (2013.01); H01L 21/02274 (2013.01); H01L 21/02348 (2013.01); H01L 21/76825 (2013.01); H01L 21/76832 (2013.01); H01L 21/76838 (2013.01);
Abstract
Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.