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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9390941 B1

PDFFull Text
Date of Patent:
Jul. 12, 2016

Filed:

Nov. 16, 2010

Sample processing apparatus, sample processing system, and method for processing sample

Applicants:

Seiichi Watanabe, Houfu, JP;

Yutaka Kozuma, Kudamatsu, JP;

Tooru Aramaki, Kudamatsu, JP;

Naoki Yasui, Kudamatsu, JP;

Norihiko Ikeda, Hiroshima, JP;

Hiroaki Takikawa, Fujisawa, JP;

Inventors:

Seiichi Watanabe, Houfu, JP;

Yutaka Kozuma, Kudamatsu, JP;

Tooru Aramaki, Kudamatsu, JP;

Naoki Yasui, Kudamatsu, JP;

Norihiko Ikeda, Hiroshima, JP;

Hiroaki Takikawa, Fujisawa, JP;

Assignee:

HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;

Attorney:

Baker Botts L.L.P.

Primary Examiner:

Rakesh Dhingra

Int. Cl.
CPC ...
H01L 21/306 (2006.01); C23F 1/00 (2006.01); H01L 21/3213 (2006.01); G03F 7/40 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); G03F 7/40 (2013.01); H01J 37/32357 (2013.01); H01J 37/32807 (2013.01); H01J 37/32816 (2013.01); H01J 37/32871 (2013.01); H01L 21/0273 (2013.01); H01L 21/28035 (2013.01);
Abstract

There is provided a VUV light processing apparatus that can apply vacuum ultraviolet light to the entire surface of a wafer in excellent reproducibility and can process the wafer with VUV (vacuum ultraviolet) light in excellent reproducibility. A VUV light processing apparatus includes: a chamber connected with a gas supply apparatus and an evacuation apparatus, the chamber being capable of reducing the pressure inside the chamber; a plasma light source that generates VUV light including a wavelength of 200 nm or less, the plasma light source including a plasma generating unit that generates plasma in the chamber; and a VUV transmission filter provided between a stage on which a sample to be processed is placed and the sample in the chamber, the VUV transmission filter transmitting the VUV light including a wavelength of 200 nm or less and not transmitting electrons, ions, and radicals in plasma, the VUV transmission filter having the outer diameter size larger than that of the sample.

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