The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Feb. 14, 2012
Linlin Wang, Santa Clara, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
Linlin Wang, Santa Clara, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Nitin K. Ingle, Santa Clara, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.