The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jan. 29, 2014
Applicant:
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Inventors:
Hiroki Murakami, Nirasaki, JP;
Koji Sasaki, Nirasaki, JP;
Keisuke Suzuki, Nirasaki, JP;
Yuichiro Morozumi, Tokyo, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/36 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/30 (2013.01); C23C 16/45531 (2013.01); C23C 16/45544 (2013.01); H01L 21/022 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01);
Abstract
A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.