The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Aug. 13, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/30 (2010.01); H01L 33/00 (2010.01); C30B 29/40 (2006.01); C30B 33/00 (2006.01); H01L 21/308 (2006.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/30 (2013.01); C30B 29/406 (2013.01); C30B 33/00 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02658 (2013.01); H01L 21/3086 (2013.01); H01L 33/0008 (2013.01); H01L 33/22 (2013.01); H01L 33/007 (2013.01);
Abstract
Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.