The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Jun. 24, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chien-Ying Sun, Tainan, TW;
En-Chiuan Liou, Tainan, TW;
Ming-Shing Chen, Tainan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Chih-Wei Yang, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); G06F 17/5081 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/66545 (2013.01); H01L 29/7856 (2013.01);
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a plurality of fin shaped structures and a dummy gate structure. The fin shaped structures are disposed in a substrate, where at least one of the fin shaped structures has a tipped end. The dummy gate structure is disposed on the substrate, and includes an extending portion covering the tipped end.