The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
May. 27, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Rai-Min Huang, Taipei, TW;
Sheng-Huei Dai, Taitung County, TW;
Chen-Hua Tsai, Hsinchu County, TW;
Duan Quan Liao, Singapore, SG;
Yikun Chen, Singapore, SG;
Xiao Zhong Zhu, Singapore, SG;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A FINFET transistor structure includes a substrate including a fin structure. Two combined recesses embedded within the substrate, wherein each of the combined recesses includes a first recess extending in a vertical direction and a second recess extending in a lateral direction, the second recess has a protruding side extending to and under the fin structure. Two filling layers respectively fill in the combined recesses. A gate structure crosses the fin structure.