The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Oct. 21, 2008
Applicants:
Naotsugu Hoshi, Portland, OR (US);
Noriyuki Kobayashi, Nirasaki, JP;
Inventors:
Naotsugu Hoshi, Portland, OR (US);
Noriyuki Kobayashi, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); H01J 37/32091 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76834 (2013.01);
Abstract
A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CF(x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CF(y and z are predetermined natural numbers) gas and Ngas, and the flow rate of the Ngas in the process gas is higher than the flow rate of the CFgas.