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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9384992 B1

PDFFull Text
Date of Patent:
Jul. 05, 2016

Filed:

Feb. 01, 2013

Plasma processing method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kazuki Narishige, Miyagi, JP;

Takanori Sato, Miyagi, JP;

Manabu Sato, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Stephanie Duclair

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/04 (2006.01); H01L 21/311 (2006.01); H01L 27/115 (2006.01); H01L 21/3213 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32091 (2013.01); H01J 37/32165 (2013.01); H01L 21/042 (2013.01); H01L 21/308 (2013.01); H01L 21/30655 (2013.01); H01L 21/311 (2013.01); H01L 21/31116 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 21/67109 (2013.01); H01L 21/6831 (2013.01);
Abstract

A plasma processing method is provided for etching a multilayer film having a first film and a second film with differing dielectric constants alternatingly stacked on a substrate, and forming a hole with a predetermined shape in the multilayer film. The plasma processing method includes a first step of etching the multilayer film to a first depth using a gas mixture containing a CF based gas at a first flow rate and a bromine-containing gas, a chloride-containing gas, and/or an iodine-containing gas; a second step of etching the multilayer film to a second depth after the first step using a gas mixture containing the CF based gas at a second flow rate and the bromine-containing gas, the chloride-containing gas, and/or the iodine-containing gas; and a third step for over etching the multilayer film after the second step until the hole reaches a base layer.

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