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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9384976 B1

PDFFull Text
Date of Patent:
Jul. 05, 2016

Filed:

Dec. 22, 2014

Method for manufacturing semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Mitsuhiro Ichijo, Zama, JP;

Tetsuhiro Tanaka, Isehara, JP;

Seiji Yasumoto, Tochigi, JP;

Shun Mashiro, Oyama, JP;

Yoshiaki Oikawa, Sagamihara, JP;

Kenichi Okazaki, Tochigi, JP;

Assignee:

SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Evren Seven

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/511 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02614 (2013.01); C23C 16/308 (2013.01); C23C 16/45578 (2013.01); C23C 16/511 (2013.01); H01J 37/3244 (2013.01); H01J 37/32192 (2013.01); H01J 37/32449 (2013.01); H01J 37/34 (2013.01); H01L 21/02274 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 21/0237 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01);
Abstract

It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

Find Patent Forward Citations

Ichijo, Mitsuhiro. (2016). Method for manufacturing semiconductor device (U.S. Patent No. 9384976). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9384976

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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