The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Aug. 04, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Rajesh N. Gupta, Devarabisnahalli, IN;
Assignee:
Micron Technologies, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 11/39 (2006.01); B82Y 10/00 (2011.01); G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/39 (2013.01); B82Y 10/00 (2013.01); G11C 7/00 (2013.01);
Abstract
Apparatuses and methods can include write schemes for a thyristor memory cell in which an access pulse applied to the gate of the thyristor memory cell is adjusted relative to the data pulse to write data into the thyristor memory cell. Some of the write schemes may substantially reduce or eliminate an unselected data line disturb. In various embodiments, the thyristor memory cell can be structured with two control nodes and its cathode or anode coupled to a reference voltage node common to all thyristor memory cells in a memory array. Additional apparatuses and methods are disclosed.